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| AO7411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO7411 is Pb-free (meets ROHS & Sony 259 specifications). AO7411L is a Green Product ordering option. AO7411 and AO7411L are electrically identical. Features VDS (V) = -20V ID = -1.8 A (V GS = -4.5V) RDS(ON) < 120m (VGS = -4.5V) RDS(ON) < 150m (VGS = -2.5V) RDS(ON) < 200m (VGS = -1.8V) SC-70-6 (SOT 323) Top View D D G D D S D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 8 -1.8 -1.5 -10 0.625 0.4 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 160 180 130 Max 200 220 160 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO7411 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-1.8A Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-1.6A 4 -0.4 -10 -0.55 95 129 121 155 7 -0.83 Min -20 -1 -5 100 -0.8 120 160 150 200 -1 -0.6 524 93 73 12 6.24 0.52 1.84 10.5 11.8 54.5 24.7 24.7 8.2 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=-1.8V, ID=-1.0A Forward Transconductance VDS=-5V, ID=-1.8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-1.8A VGS=-4.5V, VDS=-10V, RL=5.6, RGEN=3 IF=-1.8A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-1.8A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO7411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 3 2 VGS=-1.5V 1 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2.5 -2.5V 5 6 VDS=-5V 25C 125C 5 225 Normalized On-Resistance 200 175 150 125 VGS=-4.5V 100 75 0 2 4 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 225 200 ID=-1.8A 175 RDS(ON) (m) 150 125C 125 100 75 1 2 3 4 5 6 7 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C -IS (A) 1.6 VGS=-1.8V ID=-1.8A 1.4 VGS=-1.8V 1.2 VGS=-4.5V VGS=-2.5V RDS(ON) (m) VGS=-2.5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 25C 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125 Alpha & Omega Semiconductor, Ltd. AO7411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-1.8A Capacitance (pF) 800 600 Ciss 400 Crss 200 Coss 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) DC 10 100 10s 1ms 10ms 0.1s 100s Power (W) 12 10 8 6 4 2 0 0.001 TJ(Max)=150C TA=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=200C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 PD Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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